samsung electronics uvaja nov flashbolt hbm2e spomin z visoko pasovno širino - Samsung

Samsung Electronics uvaja nov pomnilnik visoke pasovne širine Flashbolt HBM2E

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced its new High Bandwidth Memory (HBM2E) product at NVIDIA's GPU Technology Conference (GTC) to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).

Nova rešitev, Flashbolt, je prvi HBM2E v industriji, ki je na pin zapiral 3,2 gigabita na sekundo (Gbps), kar je 33 odstotkov hitreje kot prejšnja generacija HBM2. Flashbolt ima gostoto 16 Gb na die, kar je dvakrat večja od zmogljivosti prejšnje generacije. S temi izboljšavami bo en sam paket Samsung HBM2E ponudil 410 gigabajtov na sekundo (GBps) pasovno širino podatkov in 16 GB pomnilnika.

'Flashbolt's industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,' said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. 'We will continue to expand our premium DRAM offering, and improve our 'high-performance, high capacity, and low power' memory segment to meet market demand.'